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Writers: D.M.G. Leite; A.L.J. Pereira; W.A. Iwamoto; P.G. Pagliuso; P.N. Lisboa-Filho; J.H.D. da Silva
Keywords: Sputtering; GaMnN; Nanocrystalline material; Diluted magnetic semiconductor; Magnetic properties
Abstract: The magnetic characteristics of Ga1−xMnxN nanocrystalline films (x = 0.08 and x = 0.18), grown by reactive sputtering onto amorphous silica substrates (a-SiO2), are shown. Further than the dominant paramagnetic-like behaviour, both field- and temperature-dependent magnetization curves presented some particular features indicating the presence of secondary magnetic phases. A simple and qualitative analysis based on the Brillouin function assisted the interpretation of these secondary magnetic contributions, which were tentatively attributed to antiferromagnetic and ferromagnetic phases.
See PDF: Magnetic characteristics of nanocrystalline GaMnN films deposited by reactive sputtering
DOI: 10.1016/j.solidstatesciences.2012.11.020