Fluorine doped SnO2 (FTO) nanobelts: some data on electronic parameters

Journal of Physics D: Applied Physics

29 de dezembro de 2013 Rose Portasio Artigo 0

Structural and chemical composition characterization in FTO samples. (a) XRD diffraction pattern in log scale (PDF # 41-1445) of FTO obtained by carbothermal reduction process, (b) EDX spectrum used to quantify the chemical composition in samples. The inset shows the two probes resistance measurements performed in different temperatures for SnO2 and FTO nanobelts. (c) depicts an SEM image of FTO nanobelts showing their morphology with length of several micrometres; in the inset is their distribution of sizes. In (d) is shown the current–voltage measurements comparing the performance of undoped SnO2 and FTO nanobelts.

Writers: Cleber A. Amorim, Cleocir J. Dalmaschio, Edson R. Leite, Adenilson J. Chiquito

Keywords: field effect transistor; electronic transport; electron mobility

Abstract: Fluorine doped SnO2 (FTO) nanobelts were synthesized and their transport properties, such as conduction mechanism, mobility, carrier density and density of states (DOS) were investigated. Variable range hopping was observed as the dominant mechanism in a large range of temperature (40–260 K). Through these data we estimated the localization length and hopping distance at 300 K of FTO nanobelts exhibiting a three-dimensional character for carrier transport. The carrier mobility was calculated to be 48 cm2 V−1 s−1 for samples with carrier density of 2 × 1018 cm−3. Taking into account the parameters obtained from temperature-dependent resistivity and the above data, the characteristic DOS at Fermi level in our samples was found.

DOI: 10.1088/0022-3727/47/4/045301

See PDF: Fluorine doped SnO2 FTO nanobelts some data on electronic parameters

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