Effects of non-complexing additives on electrodeposited Cu(InGa)Se-2 (CIGSe) thin film

Semiconductors, Dielectrics, and Metals for Nanoelectronics 11 Volume: 58 Issue: 7 Pages: 355-359 Published: 2013

29 de setembro de 2013 Rose Portasio Artigo 0

effects-of-non-complexing-additives-on-electrodeposited-cuingase-2-cigse-thin-film — SEM images of the CIGSe thin films prepared from electrolytic bath containing: (a) 0.1 mM GLR, (b) 1 mM GLR, (c) 10 mM GLR, (d) 0 mM of additives, (e) 0.1 mM TRT, (f) 1 mM TRT and (g) 10 mM TRT.

Writers: Francisco.W. de S. Lucas, Lucia H. Mascaro

Keywords: Thin film; semiconductor

Abstract: Thin film of Cu(InGa)Se₂ (CIGSe) is a very promising semiconductor material as absorber layers for solar cell and photoelectrochemical hydrogen production application. The electrodeposition may be one effective alternative to vacuum based techniques of CIGSe fabrication. The use of additives in electrodeposition can to cause interesting effect on the growth and structure of the films. Thus, this work evaluated main effects of non-complexing additives (Glycerol and Triton 100-X) on electrodeposited CIGSe thin films. It was observed changes in the microstructure in the grain size of the deposits and this promotes differences in the carriers density, flat-band potential and others properties of the films.

See PDF: Effects of non-complexing additives on electrodeposited Cu(InGa)Se-2 (CIGSe) thin film

DOI: 10.1149/05807.0355ecst