Abstract: We report on the growth and transport properties of single crystalline Sb doped SnO2 wires grown from chemical vapour deposition. While undoped samples presented semiconducting behaviour, doped ones clearly undergo a transition from an insulating state (dR/dT < 0) to a metallic one (dR/dT > 0) around 130-150 K depending on the doping level. Data analysis in the framework of the metal-to-insulator transition theories allowed us to investigate the underlying physics: electron-electron and electron-phonon interactions were identified as the scattering mechanisms present in the metallic phase, while the conduction mechanism of the semiconducting phase (undoped sample) was characterized by thermal activation and variable range hopping mechanisms. Published by AIP Publishing.
Author(s):Costa, I. M.; Bernardo, E. P.; Marangoni, B. S.; et al.
O Laboratório Aberto de Interatividade para Disseminação do Conhecimento Científico e Tecnológico (LAbI), vinculado à Universidade Federal de São Carlos (UFSCar), é voltado à prática da divulgação científica pautada na interatividade; nas relações entre Ciência, Arte e Tecnologia.
Photocatalytic activity and photoluminescence properties of TiO2, In2O3, TiO2/In2O3 thin films multilayer Abstract: This study evaluated the effect of crystallization temperature (300, 500 and 700 °C) on the photocatalytic and photoluminescent properties of the multilayer thin films […]
Writers: L.S. Cavalcante, E. Moraes, M.A.P. Almeida, C.J. Dalmaschio, N.C. Batista, J.A. Varela, E. Longo, M. Siu Li, J. Andrés, A. Beltrán Keywords: ZnMoO4; Raman; Defects; Band gap; DFT; Photoluminescence Abstract: In this paper, a combined theoretical and experimental study on […]
Computational procedure to an accurate DFT simulation to solid state systems Abstract: The density functional theory has become increasingly common as a methodology to explain the properties of crystalline materials because of the improvement in […]