Tetragonal zinc-blende MnGa ultra-thin films with high magnetization directly grown on epi-ready GaAs(111) substrates
Abstract: We report on high quality MnGa epilayers directly grown on GaAs(111)-(1 × 1) reconstructed surface. MnGa layers are characterized by the stacking of (111) planes of tetragonal zinc-blende structure, which are rotated by 11° with respect to the underlying (111) planes of the GaAs lattice. These ultra-thin MnGa epilayers with lattice parameters a = 0.55 nm and c = 0.61 nm are stabilized for thickness between 5 and 20 nm with a net magnetic moment of 3.2 μB per Mn atom. These epilayers are potentially suited for semiconductor spintronics applications due to the reversal of its magnetization in relatively low magnetic fields.
Author(s): Arins, A. W.; Jurca, H. F.; Zarpellon, J.; et al.
Applied Physics Letters
Volume: 102 Issue: 10 Published: 2013
DOI: https://doi.org/10.1063/1.108642
