Bismuth doping on CuGaS2 thin films: structural and optical properties

Abstract: In this work, we present a solvothermal method to prepare bismuth (Bi)-doped CuGaS2 chalcopyrite nanocrystals ink and apply it to an allsolution-processed approach for the preparation of films with a thickness of approximately 730 nm and with enhanced optical properties and lower band gap energy than the undoped semiconductor films. The low-cost deposition method is comprised by spray deposition of the chalcogenide nanocrystals ink onto the molybdenum substrates, producing microcrystalline films with grains larger than 400 nm originated from coalescence of Bi-doped nanocrystals. Bi-doped CuGaS2 microcrystalline films are a good candidate to be applied as an absorber layer in thinfilm solar cells.

Author(s): Andrade, Marcos A. S., Jr.; Mascaro, Lucia H.

Mrs Communications

Volume: 8 Issue: 2 Pages: 504-508 Published: 2018

DOI:  https://doi.org/10.1557/mrc.2018.63

PDF: Bismuth doping on CuGaS2 thin films – structural and optical properties