Investigation of trapping levels in p-type Zn(3)P(2 )nanowires using transport and optical properties

Applied Physics Letters

25 de setembro de 2018 LAbI UFSCar Artigo 0

Investigation of trapping levels in p-type Zn(3)P(2 )nanowires using transport and optical properties

Abstract: Here, we report the synthesis and structural characterization of high-quality Zn3P2 nanowires via chemical vapour deposition. Structural and morphological characterization studies revealed a reliable growth process of long, uniform, and single-crystalline nanowires. From temperature dependent transport and photoluminescence measurements, we have observed the contribution of different acceptor levels (15, 50, 70, 90, and 197 meV) to the conduction mechanisms. These levels were associated with zinc vacancies and phosphorous interstitial atoms which assigned a p-type character to this semiconductor. From time resolved photoluminescence experiments, a 91 ps lifetime decay was found. Such a fast lifetime decay is in agreement with the exciton transition along the bulk emission from high quality crystalline nanowires. Published by AIP Publishing.

Author(s): Lombardi, G. A.; de Oliveira, F. M.; Teodoro, M. D.; et al.

Applied Physics Letters

Volume: 112 Issue: 19 Published: 2018

DOI: https://doi.org/10.1063/1.5026548

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O Laboratório Aberto de Interatividade para Disseminação do Conhecimento Científico e Tecnológico (LAbI), vinculado à Universidade Federal de São Carlos (UFSCar), é voltado à prática da divulgação científica pautada na interatividade; nas relações entre Ciência, Arte e Tecnologia.