Evidence for resonant scattering of electrons by spin fluctuations in LaNiO3/LaAlO3 heterostructures grown by pulsed laser deposition

Abstract: We present measurements of resistivity rho in highly oriented LaNiO3 films grown on LaAlO3 substrates by using a pulsed laser deposition technique. The experimental data are found to follow a universal rho(T) ae T (3/2) dependence for the entire temperature interval (20 K T 300 K). The observed behavior has been attributed to a resonant scattering of electrons on antiferromagnetic fluctuations (with a characteristic energy h omega (sf) a parts per thousand integral 2.1 meV) triggered by spin-density wave propagating through the interface boundary of LaNiO3/LaAlO3 sandwich.

Author(s): Sergeenkov, S; Cichetto, L; Longo, E; Araujo-Moreira, FM

JETP LETTERS

DOI: 10.1134/S0021364015180125