Weak localization and electron-electron scattering in fluorine-doped SnO2 random nanobelt thin films

Journal of Physics and Chemistry of Solids Volume: 75 Issue: 5 Pages: 583-587 Published: 2014

16 de janeiro de 2014 Rose Portasio Artigo 0

weak-localization-and-electron-electron-scattering-in-fluorine-doped-sno2-random-nanobelt-thin-films — Structural and chemical composition characterization of FTO samples. (a) XRD diffraction pattern (PDF # 41-1445) of FTO obtained by carbothermal reduction process, (b) EDX spectrum used to quantify the chemical composition of the samples and (c) SEM image of as-grown FTO samples showing nanobelts morphology with several micrometers of length.

Writers: Cleber A. Amorim, Cleocir J. Dalmaschio, André L.R. Melzi, Edson R. Leite, Adenilson J. Chiquito

Keywords: Nanostructures; Oxides; Electrical properties; Magnetic properties; Transport properties

Abstract: Electronic properties of self-assembled high crystalline quality fluorine-doped tin oxide (FTO) nanobelts were studied. We report the experimental transport data of a thin film made using a dispersion of these single-crystal nanobelts. We have shown that the theory of weak localization in a weak disorder regime provides a reasonable description of the observed electrons’ transport characteristics of fluorine doped tin oxide nanobelts thin films. Also, our results suggest that the macroscopic extrinsic disorder, related to the random distribution of nanobelts, does not give a noticeable contribution to the whole transport mechanism.

See PDF: Weak localization and electron-electron scattering in fluorine-doped SnO2 random nanobelt thin films

DOI: 10.1016/j.jpcs.2014.01.003