Electrical behavior of Bi0.95Nd0.05FeO3 thin films grown by the soft chemical method

Ceramics International Volume: 40 Issue: 6 Pages: 8715-8722 Published: 2014

X-ray diffraction of a multiferroic thin film deposited by the soft chemical method and annealed at 500 ºC in static air for 2 h.

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Writers: F.B. Destro, Francisco Moura, Cesar R. Foschini, M.G. Ranier, Elson Longo, Alexandre Z. Simões

Keywords: Chemical synthesis; Electron diffraction; Ferroelectricity; Thin films

Abstract: This paper focuses on the electrical properties of Bi0.95Nd0.05FeO3 thin films (BNFO05) deposited on Pt/TiO2/SiO2/Si (100) substrates by the soft chemical method. A BNFO05 single phase was simultaneously grown at a temperature of 500 1C for 2 h. Room temperature magnetic coercive field indicates that the film is magnetically soft. The remanent polarization (Pr) and the coercive field (Ec) measured were 51 μC/cm2 and 65.0 kV/cm, respectively, and were superior to the values found in the literature. XPS results show that the oxidation state of Fe is purely 3þ, which is beneficial for producing a BNFO05 film with low leakage current. The polarization of the Au/BNFO05 on Pt/TiO2/SiO2/Si (100) capacitors with a thickness of 230 nm exhibited no degradation after 1 108 switching cycles at a frequency of 1 MHz. Experimental results demonstrated that the soft chemical method is a promising technique for growing films with excellent electrical properties, and can be used in various integrated device applications.

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