Analysis of Dopant Atom Distribution and Quantification of Oxygen Vacancies on Individual Gd- Doped CeO2 Nanocrystals

Chemistry-a European Journal 

Analysis of Dopant Atom Distribution and Quantification of Oxygen Vacancies on Individual Gd- Doped CeO2 Nanocrystals

Abstract: This work reports the analysis of the distribution of Gd atoms and the quantification of O vacancies applied to individual CeO2 and Gd‐doped CeO2 nanocrystals by electron energy‐loss spectroscopy. The concentration of O vacancies measured on the undoped system (6.3±2.6 %) matches the expected value given the typical Ce3+ content previously reported for CeO2 nanoparticles. The doped nanoparticles have an uneven distribution of dopant atoms and an atypical amount of O vacant sites (37.7±4.1 %). The measured decrease of the O content induced by Gd doping cannot be explained solely by the charge balance including Ce3+ and Gd3+ ions.

Author(s): Stroppa, Daniel G.; Dalmaschio, Cleocir J.; Houben, Lothar; et al.

Chemistry-a European Journal 

Volume: 20 Issue: 21 Pages: 6288-6293 Published: 2014

DOI: https://doi.org/10.1002/chem.201400412

PDF: Analysis of Dopant Atom Distribution and Quantification of Oxygen Vacancies on Individual Gd‐Doped CeO2 Nanocrystal

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O Laboratório Aberto de Interatividade para Disseminação do Conhecimento Científico e Tecnológico (LAbI), vinculado à Universidade Federal de São Carlos (UFSCar), é voltado à prática da divulgação científica pautada na interatividade; nas relações entre Ciência, Arte e Tecnologia.