Gold nanoparticles functionalized with 4,4’-dithiobiphenyl blended with CuS in PMMA for switching memory devices
Abstract: A switching memory device based on functionalized gold nanoparticles (AuNPs) and hexagonal copper sulfide nanocrystals (CuS), finely blended in polymethylmethacrylate matrix (PMMA), is herein presented. A two-electrode sandwich architecture has been implemented using aluminum top and bottom electrodes and a polymeric insulating layer based on PMMA/AuNPs/CuS. The device showed memory storage capabilities suitable for (Read Only Memory) ROM applications and behaves as a typical Write-Once, Read-Many-times (WORM) device. The results obtained with the blend containing AuNPs and/or CuS were compared with pure PMMA. By a voltage ramp in the range ± 9 V, it was possible to permanently change the electrical resistance between the electrodes yielding an ON/OFF current ratio above 105 with long-term stability over the whole experiment duration (30 days).
Author(s): Cerra, S.; Pica, P.; Congiu, M.; Boratto, M. H. ; Graef, C. F.O. ; Fratoddi, Ilaria
Journal of Materials Science: Materials in Electronics
Published: 2020, v. 31, n. 15, p. 12083-12088
