Writers: H Kamimura, R C Gouveia, C J Dalmaschio, E R Leite, A J Chiquito
Keywords: Crystal, Nanotechnology
Abstract: Single crystalline Zn3P2 nanowires were synthesized on Si substrates via vapour phase deposition catalysed by In–Au seeds. Single nanowire devices were fabricated and the metal–Zn3P2 nanowire contacts were studied using a model based on two Schottky barriers as a function of temperature. As far we know, these are the first reported values of Schottky barriers of Ti/Zn3P2 nanowire contacts. The obtained values showed no significant dependence on the temperature, indicating that the defects at the nanowire’s surfaces did not affect the device characteristics. We found evidence of an acceptor level at 49 meV, also indicating that the dominant transport mechanism is the thermal activation of carriers as is found in the bulk Zn3P2. It seems that the p-type behaviour is independent of the dimensionality of the Zn3P2 samples and primarily associated with the phosphorous interstitial atoms.
