Low voltage and high frequency vertical organic field effect transistor based on rod-coating silver nanowires grid electrode

Low voltage and high frequency vertical organic field effect transistor based on rod-coating silver nanowires grid electrode

Abstract: We report on low voltage and high frequency vertical organic field-effect transistors (VOFETs) using silver nanowires (AgNWs) as intermediate grid electrode (source) deposited through Mayer rod-coating. The optimized AgNWs electrodes deposited on insulator surface followed by low thermal annealing have sheet resistance of similar to 30 U/sq and surface roughness of 70 +/- 20 nm. Crosslinked poly(vinyl alcohol) is used as gate insulator and C-60 fullerene as n-type channel semiconductor. Our VOFETs have high output current density of 2.5 mA/cm(2) and on/off ratio of 5 x 10(3) with supply voltages up to 2 V. A fast switching performance of sub-1 ms at frequency gate modulation of 0.13 MHz is demonstrated. Moreover, our devices are produced based on low-cost methods compatible with industrial-scale production of organic electronics.

Author(s): Albano, LGS (Albano, Luiz G. S.); Boratto, MH (Boratto, Miguel H.); Nunes-Neto, O (Nunes-Neto, Oswaldo); Graeff, CFO (Graeff, Carlos F. O.)

ORGANIC ELECTRONICS

Volume: 50 | Pages: 311-316 | Published: NOV 2017

PDF: Low voltage and high frequency vertical organic field effect transistor based on rod-coating silver nanowires grid electrode

DOI: 10.1016/j.orgel.2017.08.011