Abstract: In this work, we investigated how the electrical resistivity of LaNiO3 thin films deposited on SrLaAlO4 (100), LaAlO3 (100), and MgO (100) single-crystal substrates by the pulsed laser deposition (PLD) technique can be controlled by femtosecond laser irradiation. Thin films were characterized by X-ray diffraction (XRD), field emission scanning electron microscopy (SEM-EDS), and temperature-dependent electrical resistivity measurements. The XRD data indicated good crystallinity and preferential crystallographic orientation. The electronic transport parameters of irradiated samples showed a remarkable decrease in the electrical resistivity for all studied films, which ranged from 38% to 52% depending on the temperature region considered and the type of substrate used. The results indicate a new and innovative route to decrease the electrical resistivity values in a precise, controlled, and localized manner, which could not be performed directly by well-known growth processes, allowing for direct application in non-volatile-memory electrodes.
Author(s): Leonélio Cichetto Jr, Carlos Doñate-Buendía, María Teresa Flores-Arias, Maria Aymerich, João Paulo de Campos da Costa, Eloísa Cordoncillo-Cordoncillo, João Paulo Pereira do Carmo, Oswaldo Hideo Ando Jr, Héctor Beltrán Mir, Juan Manuel Andrés Bort, Elson Longo da Silva, Adenilson José Chiquito
First published: 02/09/2025
